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Author: | Ao, Fang |
Title: | Double Heterostructure Step Recovery Diode Based on Gallium Arsenide Technology |
Galliumarsenidi-teknologialla toteutettu kaksoisheteroliitosdiodi | |
Publication type: | Master's thesis |
Publication year: | 1996 |
Pages: | 61 Language: eng |
Department/School: | Sähkö- ja tietoliikennetekniikan osasto |
Main subject: | Elektronifysiikka (S-69) |
Supervisor: | Kuivalainen, Pekka |
Instructor: | |
OEVS: | Electronic archive copy is available via Aalto Thesis Database.
Instructions Reading digital theses in the closed network of the Aalto University Harald Herlin Learning CentreIn the closed network of Learning Centre you can read digital and digitized theses not available in the open network. The Learning Centre contact details and opening hours: https://learningcentre.aalto.fi/en/harald-herlin-learning-centre/ You can read theses on the Learning Centre customer computers, which are available on all floors.
Logging on to the customer computers
Opening a thesis
Reading the thesis
Printing the thesis
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Location: | P1 Ark S80 | Archive |
Keywords: | p-i-n diode heterojunction step recovery diode |
Abstract (eng): | This Master's Thesis deals with the study and fabrication of double heterostructure step recovery diode based on gallium arsenide technology. The step recovery diode behaves as a two-state capacitor of large capacitance under forward bias and small capacitance under reverse bias. Ap+-i-n+ double heterostructure step recovery diode (DHSRD) fabricated on AlGaAs structure has demostrated the fastest transition time. The fastest transition times are obtained by the linearly graded bandgap AlxGa1-xAs with grading from x=0-0.15. The linear grading provides an electron field which confines the injected holes closer to the p+ exit region and also provides a drift field to accelerate hole removal during the reverse recovery process. In this Master's thesis, p+-i-n+ based DHSRD have been fabricated with Al0.25Ga0.75As / AlxGa1-xAs / Al0.25Ga0.75As structure and Al0.20Ga0.80As/AlxGa1-xAs/Al0.20Ga0.80As structure, where x = 0 - 0.15. Measurements of the second structural DHSRD show an ideality factor of 1.95 and a rise time of 50 ps, approximately. The capacitance under forward bias is 108 pF, and 0.9 pF under reverse bias. |
ED: | 1997-01-09 |
INSSI record number: 11811
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