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Author: | Banerjee, Kaustuv |
Title: | Non linear behaviour of three terminal graphene devices |
Publication type: | Master's thesis |
Publication year: | 2011 |
Pages: | [9] + 65 Language: eng |
Department/School: | Mikro- ja nanotekniikan laitos |
Main subject: | Optoelektroniikka (S-104) |
Supervisor: | Lipsanen, Harri |
Instructor: | Kim, Wonjae |
Electronic version URL: | http://urn.fi/URN:NBN:fi:aalto-201207022665 |
OEVS: | Electronic archive copy is available via Aalto Thesis Database.
Instructions Reading digital theses in the closed network of the Aalto University Harald Herlin Learning CentreIn the closed network of Learning Centre you can read digital and digitized theses not available in the open network. The Learning Centre contact details and opening hours: https://learningcentre.aalto.fi/en/harald-herlin-learning-centre/ You can read theses on the Learning Centre customer computers, which are available on all floors.
Logging on to the customer computers
Opening a thesis
Reading the thesis
Printing the thesis
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Location: | P1 Ark Aalto 647 | Archive |
Keywords: | Graphene ballistic transport three-terminal junctions non-linear electrical property nano-electronics |
Abstract (eng): | Graphene, a 2D allotrope of carbon, has, since its synthesis in 2004, taken the world of physicists by storm. By virtue of its unique energy spectrum grapheme exhibit many unique electronic properties - ultra high mobility of charge carriers and ambipolar effect are two of the most important ones. Three terminal ballistic junctions (TBJ), a new class of device, which has in past showed a host of novel non-linear electrical properties when fabricated out of semiconductor hetero structure, can be used to form active devices out of graphene that contravene the latter's gapless nature. In this thesis three terminal junctions were fabricated on both mono- and bilayer graphene. When operated in a push-pull configuration at room temperature both of them displayed near parabolic voltage and current output. Due to the ambipolar effect of graphene the nature of the output curves could be tuned with a back gate voltage. It was observed that the output curves tend to bend upward for operation in the electron transport regime and downward in the hole transport regime. Moreover, the output curves became progressively more non-linear as the back gate voltage drove the system deeper into either of these regimes. Both of these observations were in direct opposition to the data published in earlier literatures. The voltage rectification of the devices was found out to be about 5%. With clearer theoretical understanding of the mechanism and better fabrication strategies it is hoped that three terminal graphene junctions can be used to make rectifiers, frequency multipliers and logic gates capable of performing at high speed and low power. |
ED: | 2011-09-07 |
INSSI record number: 42706
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