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Author: | Su, Jie |
Title: | Optimization of ТЮ2 Thin Film Growth at Different Temperatures by Atomic Layer Deposition |
Publication type: | Master's thesis |
Publication year: | 2011 |
Pages: | v + 52 Language: eng |
Department/School: | Mikro- ja nanotekniikan laitos |
Main subject: | Optoelektroniikka (S-104) |
Supervisor: | Lipsanen, Harri |
Instructor: | Huhtio, Teppo ; Bosund, Markus |
Electronic version URL: | http://urn.fi/URN:NBN:fi:aalto-201207022756 |
OEVS: | Electronic archive copy is available via Aalto Thesis Database.
Instructions Reading digital theses in the closed network of the Aalto University Harald Herlin Learning CentreIn the closed network of Learning Centre you can read digital and digitized theses not available in the open network. The Learning Centre contact details and opening hours: https://learningcentre.aalto.fi/en/harald-herlin-learning-centre/ You can read theses on the Learning Centre customer computers, which are available on all floors.
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Location: | P1 Ark Aalto 1482 | Archive |
Keywords: | atomic layer deposition titanium oxide TiCl4 temperature precursor pulsing growth rate uniformity thickness variation |
Abstract (eng): | In this work TiO2 films were grown on silicon substrates by atomic layer deposition (ALD) using TiCl4 and H2O as precursors. The effect of precursor pulse length and reaction temperature on the film growth rate and film uniformity was studied. The film thickness and refractive indices were measured by ellipsometry. The simulation of TiO2 growth with different TiCl4 pulsing lengths was carried out. The results indicated that in an appropriate temperature range the growth rate and the uniformity are insensitive to a longer pulsing length. In the temperature optimization experiment, TiO2 films with a small thickness variation of 1% - 4% and growth rate (0.4 Å - 0.5 Å/cycle) were obtained in the temperature range of 200 °C to 300 °C. |
ED: | 2012-02-02 |
INSSI record number: 43904
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