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Author:Tilli, Juha-Matti
Title:Composition determination of quaternary GaAsPN
Neliyhdistepuolijohde GaAsPN:n koostumuksen määritys
Publication type:Master's thesis
Publication year:2014
Pages:xi + 90 s. + liitt. 6      Language:   eng
Department/School:Sähkötekniikan korkeakoulu
Main subject:Mikro- ja nanotekniikka   (S3010)
Supervisor:Lipsanen, Harri
Instructor:Jussila, Henri
Electronic version URL: http://urn.fi/URN:NBN:fi:aalto-201411032972
OEVS:
Electronic archive copy is available via Aalto Thesis Database.
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Location:P1 Ark Aalto  2408   | Archive
Keywords:GaAsPN
quaternary semiconductor
X-ray diffraction
Rutherford backscattering
photoreflectance
neliyhdistepuolijohde
röntgendiffraktio
Rutherford-takaisinsironta
fotoreflektanssi
Abstract (eng):30 nm and 130 nm thick Ga(As)PN epilayers were grown on a GaP substrate to study whether it is possible to determine their composition using various measurement techniques not typically used for quaternary material composition definition.
Specifically, the techniques that were most promising were using a single X-ray diffraction (XRD) scan of a quasi-forbidden (002) reflection and using X-ray reflectivity (XRR) electron density in addition to XRD peak location.
The intensity of this (002) reflection varies as a function of arsenic content, which allows having two free composition-related variables, peak intensity and location.
The obtained layer compositions are compared with accurate reference values obtained with Rutherford backscattering spectroscopy combined with nuclear reaction analysis measurements.
The results reveal that the XRD method overestimates the arsenic and nitrogen content with an error margin of about 0.12 in arsenic content and 0.025 in nitrogen content for the 30 nm thick films, but the accuracy can be improved by taking peak weakness into account.
The XRR and XRD based method is more accurate with accuracy being 0.05 in arsenic content and 0.01 in nitrogen content.
Furthermore, a method is demonstrated to determine the layer composition with photoreflectance inverting the two-level band anticrossing model to determine material composition based on the energies of the transitions from the valence band to the split conduction band.
Abstract (fin):30 nm ja 130 nm paksuja Ga(As)PN-epikerroksia kasvatettiin GaP-substraatille, joiden avulla tutkittiin onko mahdollista määrittää kerrosten koostumus mittaustekniikoilla joita ei tavanomaisesti käytetä neliyhdistepuolijohteen koostumusmääritykseen.
Erityisesti tekniikat jotka vaikuttivat lupaavimmilta olivat yhden kvasikielletystä (002)-heijastuksesta mitatun röntgendiffraktiokäyrän käyttäminen ja röntgenheijastuksella määritetyn elektronitiheyden käyttäminen röntgendiffraktiopiikin sijainnin lisäksi.
Tämän heijastuksen intensiteetti muuttuu arseenipitoisuuden funktiona, mikä sallii kahden koostumusriippuvaisen vapaan muuttujan määrittämisen.
Saatuja kerrosten koostumuksia vertaillaan tarkkoihin referenssiarvoihin, jotka on saatu Rutherford-takaisinsirontaspektroskopialla yhdistettynä ydinreaktioanalyysimittauksiin.
Tulokset paljastavat, että röntgendiffraktiomenetelmä yliarvioi arseeni- ja typpipitoisuuksia arseenipitoisuuden virheen ollen noin 0.12 ja typpipitoisuuden virheen 0.025 30 nm paksuille kerroksille, mutta tarkkuutta voidaan parantaa.
Röntgenheijastukseen ja röntgendiffraktioon pohjautuva menetelmä on tarkempi arseenipitoisuuden virheen ollen noin 0.05 ja typpipitoisuuden virheen 0.01.
Lisäksi esitettiin menetelmä, jolla voidaan määrittää kerroksen koostumus fotoreflektanssilla invertoiden kaksitasoisen band anticrossing -mallin.
Menetelmä antaa koostumuksen, kun tiedetään transitioiden energiat valenssivyöltä jakautuneelle johtavuusvyölle.
ED:2014-11-09
INSSI record number: 50017
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