search query: @supervisor Savin, Hele / total: 13
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Author: | Aurientis, Martin |
Title: | Interdigitated Back Contact n-Type Solar Cell with Black Silicon Anti-Reflecting Layer: Simulations and Experiments |
Publication type: | Master's thesis |
Publication year: | 2014 |
Pages: | 64 s. + liitt. 9 Language: eng |
Department/School: | Mikro- ja nanotekniikan laitos |
Main subject: | Micro- and Nanoelectronics (S3010) |
Supervisor: | Savin, Hele |
Instructor: | Gastrow, Guillaume von |
Electronic version URL: | http://urn.fi/URN:NBN:fi:aalto-201409012586 |
OEVS: | Electronic archive copy is available via Aalto Thesis Database.
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Location: | P1 Ark Aalto 1675 | Archive |
Keywords: | solar cell IBC BC-BJ black silicon ATLAS Silvaco simulation |
Abstract (eng): | In this work, we have processed as a reference n-type IBC cells with random pyramids on high quality float-zone silicon wafer. The front surface is passivated with Al2O3 grown by atomic layer deposition. The same structure is simulated with the software Silvaco ATLAS. The simulated IV-characteristic fits the experimental curve in the dark and under AM1.5G with a relative error below 1%. Previous measurements on minority carrier lifetime experiments on black silicon samples passivated with 20nm Al2O3 layer have resulted in an effective surface recombination velocity below 5 cm/s. This value was used to simulate IBC cells with black silicon by adjusting the above-mentioned ATLAS model in order to see the impact of black silicon on the solar cell efficiency. The results show an increase in short-circuit current (Isc) of 6mA and efficiency of 0.3% at normal incidence. Simulation reveals that a lower front surface recombination velocity would not significantly increase the efficiency of the cell. Furthermore, the simulations reveal that the emitter passivation is a critical parameter to increase further the efficiency of the cell. |
ED: | 2014-09-21 |
INSSI record number: 49725
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