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Author:Nordlund, Henri
Title:HVPE-reaktorin optimointi ja simulointi GaN-alustakiteen valmistukseen
Optimization and simulation of HVPE reactor in growth of GaN substrate wafer
Publication type:Master's thesis
Publication year:2010
Pages:vii + 80      Language:   fin
Department/School:Mikro- ja nanotekniikan laitos
Main subject:Optoelektroniikka   (S-104)
Supervisor:Sopanen, Markku
Instructor:Mattila, Marco
Electronic version URL: http://urn.fi/URN:NBN:fi:aalto-201203131487
OEVS:
Electronic archive copy is available via Aalto Thesis Database.
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Location:P1 Ark Aalto  1241   | Archive
Keywords:simulation
reactor optimization
substrate
HVPE
simulointi
GaN
CFD
FEM
reaktorin optimointi
alustakide
Abstract (eng): Operation of hydride vapor phase epitaxy (HVPE) reactor was simulated with commercial software in this thesis.
Simulation models gallium nitride (GaN) semiconductor wafer growth from precursor materials which are fed in to the reactor chamber.
Simulation model tries to take into account all significant physical phenomena and parameters which have an influence on growth process like temperature and its conduction, concentrations, viscosities and flow velocities of different gas species, diffusion and reactor geometry.

Reactor chamber geometry, V/III ratio of gases, reactor pressure and flow velocity of gases were changed in this model.
It was seen how distance between inlet tubes and substrate effects growth profile.
When inlet tubes were far away from substrate growth profile was more fiats but this might increase gas phase reactions.
Diffusion and even distribution of gases were problem when inlet tubes were close to substrate.
Highest V/III ratio did not always give the best growth profile.
Pressure changes did not have as large an influence on growth rate as other parameters but pressure affects flow laminarity.
Flow velocities have big impact on vortex that arises on substrate which decreases growth rate and changes growth profile.

Affects of turbulent and eddy gas flows to uneven growth process can he seen from simulation results.
Simulation model can he used to optimize growth rate on substrate wafer, flatness of the growth surface and consumption of the precursor materials.
Abstract (fin): Työssä simuloitiin kaupallisella ohjelmistolla hydridikaasufaasiepitaksiaalireaktorin (engl. hydride vapor phase epitaxy, HVPE) -reaktorin toimintaa.
Simuloinnilla mallinnetaan reaktorissa tapahtuvaa galliumnitridi (GaN) -puolijohdekiekon kasvua reaktoriin syötettävistä lähtöaineista.
Mallinnuksessa pyritään ottamaan huomioon kaikki merkittävät fysikaaliset ilmiöt ja parametrit, jotka vaikuttavat kiteen kasvuun, kuten lämpötila ja sen johtuminen, eri kaasujen konsentraatiot, viskositeetit, virtausnopeudet, diffuusio ja reaktorin geometria.

Mallissa muutettiin reaktorikammion geometriaa, kaasujen V/III -suhdetta, reaktorin painetta sekä kaasujen virtausnopeutta.
Reaktorikammion geometriaa muutettaessa huomattiin, miten sisääntuloputkien etäisyys alustasta vaikutti kasvuprofiilin.
Sisääntuloputkien ollessa kaukana alustasta kasvuprofiili oli tasaisempi, mutta kaasufaasireaktiot saattavat tällöin lisääntyä.
Sisääntuloputkien ollessa lähellä alustaa tuli kaasujen diffuusio ja tasainen jakautuminen ongelmaksi.
Suurin V/III -suhde ei aina tuottanut parasta kasvuprofiilia.
Paineen muuttamisella ei ollut niin suurta vaikutusta kasvunopeuteen kuin muilla muuttujilla, mutta paine vaikuttaa virtauksien laminaarisuuteen.
Kaasujen virtausnopeuksilla on suuri vaikutus alustan päälle syntyvään pyörteeseen, joka pienensi kasvunopeutta ja muutti kasvuprofiilia.

Simulaatiomallilla pystytään optimoimaan kasvunopeutta, kasvun tasaisuutta sekä kasvureaktioon osallistuvien lähtöaineiden kulutusta.
ED:2010-08-18
INSSI record number: 40134
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