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Author:Jussila, Henri
Title:Fabrication of Indium Arsenide Quantum Dot Structure for Semiconductor Optical Ampliers
Indiumarsenidikvanttipisterakenteen valmistaminen optiseen puolijohdevahvistimeen
Publication type:Master's thesis
Publication year:2010
Pages:[7] + 41      Language:   eng
Department/School:Mikro- ja nanotekniikan laitos
Main subject:Optoelektroniikka   (S-104)
Supervisor:Sopanen, Markku
Instructor:Hakkarainen, Teppo ; Aierken, Abuduwayiti
Electronic version URL: http://urn.fi/URN:NBN:fi:aalto-201203131428
OEVS:
Electronic archive copy is available via Aalto Thesis Database.
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Location:P1 Ark Aalto  822   | Archive
Keywords:indium phosphide
indium arsenide
indium gallium arsenide phosphide
quantum dot
semiconductor optical amplier
metalorganic vapor phase epitaxy
indiumarsenidi
indiumfosdi
indiumgalliumarsenidifosdi
kvanttipiste
optinen puolijohdevahvistin
metallo-organinen kaasufaasiepitksia
Abstract (eng): In this thesis, the properties of self-assembled InAs/InGaAsP/InP quantum dots (QD) have been investigated.
The focus of this work was to fabricate such a structure that can be used in a telecommunication wavelength semiconductor optical amplifier (SOA).
The examined InAs QD samples were fabricated by metalorganic vapor-phase epitaxy technique.
Photoluminescence (PL) and atomic force microscopy (AFM) were used in the characterization of the optical and the structural properties of the samples, respectively.
InAs island size and the areal density was first optimized for SOAs by growing self-assembled InAs islands directly on InP.
These results were used to finalize the structure containing also InGaAsP waveguide layer.
The AFM results of the final structure show that InAs islands were grown quite homogenously on InGaAsP with an average height of 10 nm and an average base diameter of 30 nm.
The low temperature PL peak of InAs/InGaAsP/InP quantum dots was tuned to 1.56 µm wavelength.
Abstract (fin): Tämä diplomityö tutkii itseorganisoidusti valmistettuja InAs kvanttipisteitä InGaAsP:n ja InP päällä.
Työn tavoitteena on ollut sellaisen kvanttipisterakenteen valmistaminen, joka soveltuu optiseen puolijohdevahvistimeen (SOA) tietoliikenneaallonpituuksilla.
Työtä varten valmistettiin InAskvanttipistenäytteitä metallo-organisella kaasufaasiepitaksialla.
Työn näytteet karakterisoitiin fotoluminesenssi- ja atomivoimamikroskopiamittausmenetelmillä.

InAs-saarekkeiden koko ja tiheys optimoitiin ensiksi sopivaksi SOA-rakennetta varten valmistamalla itseorganisoituvia InAs-saarekkeita suoraan InP päälle.

Näitä tuloksia käytettiin optimoidun InGaAsP-kerroksen sisältävän rakenteen valmistuksessa.
Atomivoimamikroskopiamittaus paljasti, että optimoidun rakenteen InAs-saarekkeet olivat keskimäärin 10 nm korkeita ja 30 nm leveitä.
Kvanttipisteiden luminesenssipiikin maksimi havaittiin 1.56 µm aallonpituudella 10 K lämpötilassa.
ED:2010-05-05
INSSI record number: 39549
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