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Author:Multasuo, Sami
Title:RF Power Amplifier for TETRA Base Station
RF tehovahvistin TETRA tukiasemaan
Publication type:Master's thesis
Publication year:2013
Pages:56      Language:   eng
Department/School:Sähkötekniikan korkeakoulu
Main subject:Radiotiede ja -tekniikka   (S3012)
Supervisor:Räisänen, Antti
Instructor:Thomasson, Kristian
Electronic version URL: http://urn.fi/URN:NBN:fi:aalto-201401141137
OEVS:
Electronic archive copy is available via Aalto Thesis Database.
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Location:P1 Ark Aalto  1108   | Archive
Keywords:TETRA standard
base station
linear power amplifier
TETRA-standardi
tukiasema
lineaarinen tehovahvistin
LDMOS
GaN
Abstract (eng):Linear power amplifiers are needed in systems, where spectrum efficient modulation methods are used.
One of these systems is TETRA (TErrestrial Trunked RAdio).
High linearity of power amplifier usually affects negatively its power efficiency.
Therefore, different linearization methods are used to keep the power amplifier linear, while its efficiency is increased.
Different linearization methods are presented in begining of this study.
The scope of this thesis work is to study LDMOS and GaN transistor power amplifiers and select a suitable transistor to be used in the TETRA base station power amplifier.
Using a circuit simulator, LDMOS and GaN transistor characteristics are analysed and power amplifier circuits are designed according the design specifications.
Using the information derived from the simulations, a prototype of TETRA power amplifier is constructed.
The constructed power amplifier circuit is then measured and the results are compared to simulation data and requirements of the TETRA standard.
Based on the achieved measurement results, the LDMOS transistor is the most suitable choice to be used in TETRA power amplifier.
However the study shows, that if the price of the GaN devices goes down, they may challenge LDMOS transistor, as they can offer wide frequency bandwidths with decent power efficiency and acceptable gain.
Abstract (fin):Lineaarisia tehovahvistimia tarvitaan järjestelmissä, joissa käytetään suureen spektritehokkuuteen pyrkiviä modulointimenetelmiä.
Yksi tällaisista järjestelmistä on TETRA-järjestelmä (TErrestrial Trunked RAdio).
Lineaariset tehovahvistimet ovat usein huonoja hyötysuhteeltaan.
Siksi erilaisia linearisointimenetelmiä käytetään tehovahvistimien linearisointiin, jotta niiden hyötysuhdetta saadaan parannettua.
Erilaisia linearisointimenetelmiä on esitelty tämän työn alkupuolella.
Tämän työn tarkoituksena on tutkia LDMOS ja GaN tyyppisiä transistoreja ja niiden sopivuutta TETRA tukiaseman tehovahvistimiksi.
Piirisimulaattoria apuna käyttäen LDMOS- ja GaN-transistorien tyypilliset ominaisuudet selvitetään ja annettujen vaatimusten mukaiset tehovahvistinkytkennät muodostetaan.
Simulaatioista saatua tietoa hyödyntäen TETRA vahvistimen prototyyppi valmistetaan.
Prototyyppivahvistin mitataan ja saatuja mittatuloksia verrataan simultaatiotuloksiin sekä TETRA-standardin asettamiin vaatimuksiin.
Mittaustulosten perusteella LDMOS tyyppinen transistori on tutkituista transistoreista paras vaihtoehto TETRA-tehovahvistimeksi.
Selvitys kuitenkin osoittaa, että jos GaN-transistorien hinta laskee, voivat ne tarjota varteen otettavan vaihtoehdon LDMOS-transistoreille TETRA-tukiasemakäyttöön.
ED:2014-01-19
INSSI record number: 48468
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