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Author:Ao, Fang
Title:Double Heterostructure Step Recovery Diode Based on Gallium Arsenide Technology
Galliumarsenidi-teknologialla toteutettu kaksoisheteroliitosdiodi
Publication type:Master's thesis
Publication year:1996
Pages:61      Language:   eng
Department/School:Sähkö- ja tietoliikennetekniikan osasto
Main subject:Elektronifysiikka   (S-69)
Supervisor:Kuivalainen, Pekka
Instructor:
OEVS:
Electronic archive copy is available via Aalto Thesis Database.
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Location:P1 Ark S80     | Archive
Keywords:p-i-n diode
heterojunction
step recovery diode
Abstract (eng): This Master's Thesis deals with the study and fabrication of double heterostructure step recovery diode based on gallium arsenide technology.

The step recovery diode behaves as a two-state capacitor of large capacitance under forward bias and small capacitance under reverse bias.
Ap+-i-n+ double heterostructure step recovery diode (DHSRD) fabricated on AlGaAs structure has demostrated the fastest transition time.
The fastest transition times are obtained by the linearly graded bandgap AlxGa1-xAs with grading from x=0-0.15.
The linear grading provides an electron field which confines the injected holes closer to the p+ exit region and also provides a drift field to accelerate hole removal during the reverse recovery process.

In this Master's thesis, p+-i-n+ based DHSRD have been fabricated with Al0.25Ga0.75As / AlxGa1-xAs / Al0.25Ga0.75As structure and Al0.20Ga0.80As/AlxGa1-xAs/Al0.20Ga0.80As structure, where x = 0 - 0.15.
Measurements of the second structural DHSRD show an ideality factor of 1.95 and a rise time of 50 ps, approximately.
The capacitance under forward bias is 108 pF, and 0.9 pF under reverse bias.
ED:1997-01-09
INSSI record number: 11811
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