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Author:Anteroinen, Johanna
Title:Structure and Electrical Characteristics of Graphene Field Effect Transistors
Grafeenikanavatransistorien rakenne ja sähköiset ominaisuudet
Publication type:Master's thesis
Publication year:2011
Pages:ix + 54 s. + liitt. 8      Language:   eng
Department/School:Mikro- ja nanotekniikan laitos
Main subject:Optoelektroniikka   (S-104)
Supervisor:Lipsanen, Harri
Instructor:Stadius, Kari ; Ryynänen, Jussi
Electronic version URL: http://urn.fi/URN:NBN:fi:aalto-201207022709
OEVS:
Electronic archive copy is available via Aalto Thesis Database.
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Location:P1 Ark Aalto  642   | Archive
Keywords:graphene
GFET
SiC
graphene electrical models
S-parameter measurement
CVD graphene
grafeeni
GFET
SiC grafeeni
CVD grafeeni
MOSFET
piensignaalimalli
Abstract (eng): The goal of this master's thesis was to write a literature survey of graphene transistors, and to measure and model the graphene field-effect transistors (GFET) fabricated by Nanotechnology research group at Aalto University.

Direct current (DC) and radio frequency (RF) measurements were performed on graphene field-effect transistors to find out the DC and RF properties.
Two sets of GFETs were measured, first chip was fabricated with SiC process and the second with CVD process.
The SiC GFET impedance levels were too high to measure RF properties.
RF-measurements were performed on CVD GFETs.
The CVD GFET cut-off frequency was found to be approximately 80 MHz, which is in the same range as the calculated cut-off frequency.
MOSFET small-signal model was used for GFETs and the model parameters are presented.

The results of the DC measurements were analyzed and the data was fitted according to an existing device resistance model.
The curve-fit to total device resistance gives estimations on parameters such as contact resistance, residual charge carrier concentration and conductivity mobility.
The model was validated using k-fold cross validation.
Abstract (fin): Työn tavoitteena oli tehdä kirjallisuuskatsaus grafeeni-transistoreista ja mallintaa Aalto Yliopiston Nanoteknologian tutkimusryhmän valmistamia grafeenikanavatransistoreja (engl. field-effect transistor).

Työn alkuvaiheessa havaittiin, että kirjallisuudesta löytyy muutamia grafeenikanavatransistorimalleja, jotka pohjautuvat puolijohdekanavatransistoreihin.
Työssä mitattiin grafeeni-kanavatransistorien DC-käyttäytymistä ja tarkoituksena oli tehdä radiotaajuusmittauksia SiC-grafeenitransistoreista sekä CVD grafeenitransistoreista.
Radiotaajuusmittauksia ei kuitenkaan kyetty tekemään SiC-transistoreista, koska transistorien kontaktiresistanssi oli liian suuri ja näin ollen katkotaajuus liian alhainen.
CVD-grafeenitransitoreille tehtiin S-parametrimittaukset ja laskettiin piensignaalimallin parametrit.
CVD grafeenikanavatransistorien katkotaajuudeksi saatiin 80 MHz, joka on samaa suuruusluokkaa laskennallisen katkotaajuuden kanssa.

Työssä käytettiin jo olemassaolevaamallia transistorin DC-parametrien, varauksenkuljettajien liikkuvuus, jäännösvarauksenkuljettajatiheys ja kontaktiresistanssi, selvittämiseksi.
Mallille suoritettiin validointi (engl. k-fold crossvalidation).
ED:2011-09-29
INSSI record number: 42836
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