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Author:Kilpi, Olli-Pekka
Title:Planarization of Gallium Arsenide Nanowires
Galliumarsenidinanolankojen planarisointi
Publication type:Master's thesis
Publication year:2014
Pages:viii + 67      Language:   eng
Department/School:Mikro- ja nanotekniikan laitos
Main subject:Mikro- ja nanotekniikka   (S3010)
Supervisor:Lipsanen, Harri
Instructor:Huhtio, Teppo ; Haggrén, Tuomas
Electronic version URL: http://urn.fi/URN:NBN:fi:aalto-201411042993
OEVS:
Electronic archive copy is available via Aalto Thesis Database.
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Location:P1 Ark Aalto  2406   | Archive
Keywords:nanowire
gallium arsenide
planarization
spin coating
spin-on glass
parylene
H-PDMS
nanolanka
galliumarsenidi
planarisointi
spin-on lasi
paryleeni
Abstract (eng):In this work gallium arsenide nanowire ensembles were planarized and contacted.
These group III-V semiconductor nanowires possess many interesting properties for optoelectronic and electronic devices.
However, their reliable integration to functional devices remains one of the major challenges.
Vertical integration of the nanowires can be done by fabricating an insulation layer between the top of the nanowires and the substrate before deposition of metal contacts.

The aim of this work was to find optimal filling materials for the planarization of different kinds of nanowire structures.
Nanowire samples with different diameter and length were used.
The aim was to find a material, which creates a void and crack free insulation layer without destroying the nanowires.
H-PDMS, parylene and three different polymers, SOG 111, SOG B512 and Accuflo from Honeywell, were used.
Structures were characterized by scanning electron microscope, current-voltage and optical measurements.

The results showed that B512 and Accuflo were good insulation layers, while other filling materials possessed cracks and voids.
In addition, Accuflo destroyed several nanowires, thus only B512 was observed to be a reliable planarization material.
Insulation of B512 was confirmed by current-voltage measurements.
Abstract (fin):Tässä työssä planarisoitiin ja kontaktoitiin galliumarsenidinanolankarakenteita.
Näillä III-V -ryhmien puolijohteilla on monia optoelektroniikan ja elektroniikan sovellusten kannalta kiinnostavia ominaisuuksia.
Nanolankarakenteiden yksi ongelmista on niiden kontaktointi luotettavasti.
Pystysuorien nanolankarakenteiden kontaktoiminen vaatii eristävän ohutkalvon kasvattamista nanolankojen ja substraatin väliin.
Tätä menetelmää kutsutaan planarisoinniksi.

Työn tarkoituksena oli löytää sopivia materiaaleja erilaisten nanolankarakenteiden planarisointiin.
Tarkoituksena oli löytää materiaali, joka muodostaisi reiättömän ja halkeilemattoman ohutkalvon ilman että nanolankoja vahingoitetaan valmistuksen aikana.
Työssä planarisointiin käytettiin H-PDMS, paryleeni, SOG 111, SOG B512 ja Accuflo polymeerejä.
Rakenteita tutkittiin elektronipyyhkäisymikroskoopilla sekä optisilla ja virtajännitemittauksilla.

Huomattiin, että SOG B512 ja Accuflo muodostivat reiättömän ohutkalvon lankojen väliin, kun taas muissa polymeereissä havaittiin aukkoja ja halkeamia.
Accuflo kuitenkin tuhosi useita nanolankoja, joten B512:n todettiin olevan luotettavin materi-aali ja sen eristävyys varmennettiin virtajännitemittauksilla.
ED:2014-11-09
INSSI record number: 50033
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