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Author:Riuttanen, Lauri
Title:Thermal Annealing of AlN Thin Films Fabricated by Plasma-Enhanced Atomic Layer Deposition for GaN Epitaxy
Plasma-avusteisella atomikerrosvalmistusmenetelmällä valmistetun alumiininitridikalvon lämpökäsittely ja soveltuvuus epitaktisen galliumnitridin alustana
Publication type:Master's thesis
Publication year:2010
Pages:vii + 46 s. + liitt. 10      Language:   eng
Department/School:Mikro- ja nanotekniikan laitos
Main subject:Optoelektroniikka   (S-104)
Supervisor:Sopanen, Markku
Instructor:Suihkonen, Sami
Electronic version URL: http://urn.fi/URN:NBN:fi:aalto-201203141561
OEVS:
Electronic archive copy is available via Aalto Thesis Database.
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Location:P1 Ark Aalto  1336   | Archive
Keywords:thermal annealing
aluminum nitride
silicon
lämpökäsittely
PEALD
alumiininitridi
pii
Abstract (eng): III-nitrides, e.g. aluminum, gallium and indium nitride (AlN, GaN, InN) and their alloys are typically grown on sapphire substrates.
Silicon is an interesting candidate for substrate material for III-nitrides since it is electrically and thermally conductive unlike sapphire.
The use of silicon substrates would also decrease the manufacturing costs of III-nitride-based devices.
Another potential advantage is the integration of conventional silicon technology with III-nitride technology.

An AlN film is typically deposited on silicon before growing of GaN to compensate the lattice mismatch between the substrate and the grown layer.
The suitability of AlN grown on silicon by plasma-enhanced atomic layer deposition (PEALD) as a substrate for GaN epitaxy was experimented in this thesis.
Thermal annealing was performed to improve the crystalline quality of the deposited AlN.
The AlN films were grown on silicon substrates having different orientations.
The films were annealed both in rapid thermal processor (RTP) and in a conventional tube furnace (CTF).
The films were characterized before and after the heat treatment.
Finally, GaN films were deposited on the PEALD AlN film with metallo-organic vapor phase epitaxy (MOVPE) and characterized.

The thicknesses of the AlN films were about 200 nm and they were crack- and pinhole-free after deposition.
X-ray diffraction (XRD) measurements indicated that the films were amorphous.
Thermal annealing was found to induce cracks into the AlN films.
After the annealing the films remained amorphous.
GaN films grown by MOVPE were extremely rough polycrystalline films.
Abstract (fin): III-nitridit, kuten alumiini-, gallium- ja indiumnitridi (AlN, GaN, InN) sekä niiden yhdisteet, valmistetaan tyypillisesti safiirialustakiteille.
Tässä työssä perehdytään mahdollisuuksiin korvata safiiri piillä alustamateriaalina.
Piin etuina safiiriin nähden on sen lämmön- ja sähkönjohtavuus.
III-nitridien valmistaminen piikiekoille vähentäisi III-nitridipohjaisten komponenttien valmistuskustannuksia sekä mahdollistaisi perinteisen piiteknologian integroimisen III-nitridipohjaisiin komponentteihin.

Piin päälle valmistettavien III-nitridikerrosten valmistus aloitetaan tyypillisesti hilavakioiden eroja kompensoivan AlN-kerroksen valmistamisella.
Työssä tutkittiin piin päälle plasma-avusteisella atomikerrosvalmistusmenetelmällä (PEALD, plasma-enhanced atomic layer deposition) valmistetun AlN-kalvon soveltuvuutta GaN:n valmistusalustana.
AlN-kalvoja valmistettiin eri kidesuunnan omaaville piikiekoille ja tutkittiin lämpökäsittelyn vaikutusta niiden ominaisuuksiin.
Kalvoja lämpökäsiteltiin eri lämpötiloissa sekä pikauunilla (RTP, rapid thermal processor) että perinteisellä putkiuunilla (CTF, conventional tube furnace).
Tutkimuksen päätteeksi AlN-kalvon päälle valmistettiin GaN-kalvo metallo-orgaanisella kaasufaasiepitaksialla (MOVPE, metallo-organic vapor phase epitaxy) ja tutkittiin valmistetun GaN-kalvon ominaisuuksia.

Valmistetut AlN-kalvot olivat noin 200 nm paksuja ja niiden todettiin olevan amorfisia röntgendiffraktiomittausten (XRD, X-ray diffraction) perusteella.
Valmistetuissa kalvoissa ei havaittu reikiä eikä säröjä.
Lämpökäsittelyn jälkeen kalvoissa havaittiin säröjä.
Kalvot säilyttivät amorfisen luonteensa lämpökäsittelyssä.
MOVPE:lla valmistetut GaN-kalvot olivat erittäin karheita sekä monikiteisiä.
ED:2010-12-13
INSSI record number: 41411
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