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Author:Aurientis, Martin
Title:Interdigitated Back Contact n-Type Solar Cell with Black Silicon Anti-Reflecting Layer: Simulations and Experiments
Publication type:Master's thesis
Publication year:2014
Pages:64 s. + liitt. 9      Language:   eng
Department/School:Mikro- ja nanotekniikan laitos
Main subject:Micro- and Nanoelectronics   (S3010)
Supervisor:Savin, Hele
Instructor:Gastrow, Guillaume von
Electronic version URL: http://urn.fi/URN:NBN:fi:aalto-201409012586
OEVS:
Electronic archive copy is available via Aalto Thesis Database.
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Location:P1 Ark Aalto  1675   | Archive
Keywords:solar cell
IBC
BC-BJ
black silicon
ATLAS
Silvaco
simulation
Abstract (eng):In this work, we have processed as a reference n-type IBC cells with random pyramids on high quality float-zone silicon wafer.
The front surface is passivated with Al2O3 grown by atomic layer deposition.
The same structure is simulated with the software Silvaco ATLAS.
The simulated IV-characteristic fits the experimental curve in the dark and under AM1.5G with a relative error below 1%.
Previous measurements on minority carrier lifetime experiments on black silicon samples passivated with 20nm Al2O3 layer have resulted in an effective surface recombination velocity below 5 cm/s.
This value was used to simulate IBC cells with black silicon by adjusting the above-mentioned ATLAS model in order to see the impact of black silicon on the solar cell efficiency.
The results show an increase in short-circuit current (Isc) of 6mA and efficiency of 0.3% at normal incidence.
Simulation reveals that a lower front surface recombination velocity would not significantly increase the efficiency of the cell.
Furthermore, the simulations reveal that the emitter passivation is a critical parameter to increase further the efficiency of the cell.
ED:2014-09-21
INSSI record number: 49725
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