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Author:Laiho, Patrik
Title:Conductive atomic force microscopy studies and computational modelling of single-walled carbon nanotube thin films
Yksiseinäisten hiilen nanoputkien ohutkalvojen johtava atomivoimamikroskopia ja laskennallinen mallinnus
Publication type:Master's thesis
Publication year:2012
Pages:[6] + 59      Language:   eng
Department/School:Teknillisen fysiikan laitos
Main subject:Fysiikka   (Tfy-3)
Supervisor:Kauppinen, Esko
Instructor:Kaskela, Antti
OEVS:
Electronic archive copy is available via Aalto Thesis Database.
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Location:P1 Ark Aalto  110   | Archive
Keywords:carbon nanotubes
transparent conducting films
conductive atomic force microscopy
hiilen nanoputket
läpinäkyvät johtavat ohutkalvot
johtava atomivoimamikroskopia
Abstract (eng): Transparent, conductive thin films are a key component of devices such as thin film displays and photovoltaic cells.
Thin films of single-walled carbon nanotubes (SWCNTs) are a promising candidate material for replacing or supplementing currently-used metal oxides such as indium tin oxide (ITO).

While SWCNT thin films are and have been a topic of active research, the microscopic basis of electrical conduction in SWCNT thin films is understood relatively poorly and a better understanding of it could help enhance film properties.

In this work, electrical conduction in SWCNT thin films prepared by an aerosol synthesis method was studied by conducting atomic force microscopy (C-AFM) of the junctions between SWCNTs and their bundles, which are expected to be the dominant source of electrical resistance in the films.
The C-AFM data has been used, together with an experimental estimate of the relationship between film density and optical transmittance, in a substitute circuit model to simulate the bulk electrical and optical properties of thin films with different morphologies.

Results from the computational model were found to be within the experimental errors of properties measured from thin films, and they can be used in judging which controllable parameters in SWCNT thin film preparation should be changed to obtain the largest enhancement in thin film performance.
Abstract (fin): Läpinäkyvät johtavat ohutkalvot ovat esimerkiksi litteiden näyttöjen ja aurinkokennojen keskeinen osa.
Yksiseinäisten hiilen nanoputkien (SWCNT) muodostamat ohutkalvot ovat lupaava ehdokas nykyisin käytössä olevien materiaalien, kuten indiumin ja tinan seosoksidin (ITO), täydentäjäksi ja korvaajaksi.

Vaikka SWCNT-ohutkalvoja on tutkittu kokonaisuudessaan paljon, niiden sähkönjohtavuuden mikroskooppinen perusta on vielä jossain määrin epäselvä ja sen parempi ymmärrys voisi auttaa parantamaan ohutkalvojen ominaisuuksia.

Tässä työssä aerosolisynteesimenetelmällä valmistettujen SWCNT-ohutkalvojen sähkönjohtavuutta on tutkittu mittaamalla johtavalla atomivoimamikroskopialla (C-AFM) nanoputkien ja niiden kimppujen välisiä liitosvastuksia, joiden arvioidaan olevan kalvojen sähkönjohtavuutta eniten rajoittava tekijä.
Mittaustuloksia sekä kokeellista arviota kalvojen läpinäkyvyyden ja SWCNT-kimpputiheyden suhteesta on käytetty sijaispiirimallissa, jolla on simuloitu eritiheyksisten kalvojen läpinäkyvyyttä ja sähkönjohtavuutta.

Saadut tulokset mahtuvat valmistetuista ohutkalvoista mitattujen arvojen virherajojen sisään ja niitä voidaan käyttää apuna arvioitaessa, minkä hallittavissa olevien tekijöiden muutos SWCNT-ohutkalvojen valmistuksessa johtaa suurimpaan parannukseen ohutkalvojen ominaisuuksissa.
ED:2012-11-27
INSSI record number: 45632
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