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Author:Olsson, Anders
Title:Fabrication and Characterization of Thermophotonic Devices
Termofotonisten laitteiden valmistus ja karakterisointi
Publication type:Master's thesis
Publication year:2011
Pages:[9] + 46      Language:   eng
Department/School:Lääketieteellisen tekniikan ja laskennallisen tieteen laitos
Main subject:Laskennallinen tekniikka   (S-114)
Supervisor:Tulkki, Jukka
Instructor:Oksanen, Jani
Electronic version URL: http://urn.fi/URN:NBN:fi:aalto-201207022679
OEVS:
Electronic archive copy is available via Aalto Thesis Database.
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Location:P1 Ark Aalto  1236   | Archive
Keywords:thermophotonics
heat pump
electroluminescent cooling
cooling device
indium phosphide
indium gallium arsenide
termofotoniikka
LED
lämpöpumppu
elektroluminesenssi
jäähdytys
jäähdytyslaite
indiumfosdi
indiumgalliumarsenidi
Abstract (eng): In this thesis, the fabrication properties and characterization of broad area light emitting LED structures for thermo photonic devices are studied.
The operation of a thermo photonic device is based on electroluminescent cooling, i.e. the ability of an LED to emit photons that have received a part of their energy from the lattice heat.
This phenomenon allows an LED to cool down as it emits light if other losses are sufficiently small.

The theoretical part of the work briefly reviews the basic properties of light-emitting diodes and metal contacts used to inject current and to reflect light in the structures.
The fabrication process starts with indium phosphide (InP) semiconductor wafers, on which several semiconductor layers are grown, including an InGaAs active layer, in order to create a p-n junction capable of emitting light.
Electrical contacts are made by evaporating metal on the semiconductor structures.

The structures fabricated are characterized by photoluminescence (PL) measurements, then by current-voltage (I-V) measurements and also by atomic force microscopy (AFM) which was also briefly reviewed in this work.
Of the 63 fabricated samples 22 were complete InP/InGaAs p-n junction LED structures whose PL peaks were in the range 1630 - 1690 nm.
Abstract (fin): Tässä diplomityössä tutkitaan termofotonisille laitteille tarkoitettujen LED-rakenteiden valmistusta ja karakterisointia.
Termofotonisen laitteen toiminta perustuu elektroluminesenssijäähdytykseen, eli LEDin kykyyn emittoida fotoneja, jotka ovat saanet osan energiastaan hilalämmöstä.
Ilmiö saattaa mahdollistaa LEDin jäähtymisen sen emittoidessa valoa, jos häviöt ovat riittävän pieniä.
Työn teoreettisessa osassa käsitellään lyhyesti LEDien ja metallikontaktien perusominaisuuksia.

Metallikontakteja käytetään injektoimaan virtaa ja heijastamaan valoa rakenteissa.
Valmistusprosessi alkaa indiumfosfidi (InP) puolijohdesubstraatista, jonka pinnalle kasvatetaan useita puolijohdekerroksia, ml. aktiivinen InGaAs-kerros, tavoitteena saada aikaan valoa emittoiva p-n-liitos.
Sähköiset kontaktit valmistetaan höyrystämällä metallia puolijohderakenteiden pinnalle.

Valmistetut rakenteet karakterisoidaan fotoluminesenssimittauksilla (PL), virtajännitemittauksilla (I-V) ja atomivoimamikroskoopilla (AFM).
Näytteitä valmistettiin työn aikana 63 kpl, joista 22 oli valmiita InP/InGaAs p-n-liitos LED-rakenteita joiden PL-huiput sijoittuivat välille 1630 - 1690 nm.
ED:2011-09-08
INSSI record number: 42720
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