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Author:Maksimow, Maria
Title:Transient Current Technique (TCT) Characterization of Silicon Particle Detectors
Piihiukkasilmaisimien karakterisointi virtatransienttimenetelmällä
Publication type:Master's thesis
Publication year:2009
Pages:viii + 53      Language:   eng
Department/School:Elektroniikan, tietoliikenteen ja automaation tiedekunta
Main subject:Optoelektroniikka   (S-104)
Supervisor:Lipsanen, Harri
Instructor:Härkönen, Jaakko
Electronic version URL: http://urn.fi/URN:NBN:fi:aalto-201203071316
OEVS:
Electronic archive copy is available via Aalto Thesis Database.
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Location:P1 Ark S80     | Archive
Keywords:TCT
silicon
radiation hardness
MCZ-Si
particle detector
pii
säteilynkestävyys
MCZ-pii
hiukkasilmaisin
Abstract (eng):In future high energy physics experiments, such as in the foreseen upgrade of the particle accelerator LHC at CERN, particle detectors will be exposed to significantly high particle radiation doses.
Thus, extensive research is being conducted on improving the radiation hardness of silicon particle detectors and various defect and device engineering methods are examined.
However, little data has been gathered especially from p-type magnetic Czochralski silicon (MCZ-Si) devices.

This thesis presents the results of comparative transient current technique (TCT) measurements of both n-type and p-type MCZ silicon detectors as well as n-type Float Zone (FZ) silicon detectors.
The results demonstrate that the MCZ silicon devices have superior radiation hard properties in comparison with the FZ silicon devices.
Various examined parameters also suggest that p-type may be a more radiation hard material solution for silicon detectors than n-type MCZ silicon.
Thus, replacing the currently installed FZ silicon detectors in LHC experiments with either n-type or p-type MCZ-Si devices is a viable option.
Abstract (fin): Hiukkasilmaisimet altistuvat huomattavalle säteilylle tulevaisuudessa korkean energian hiukkasfysiikkakokeissa, esimerkiksi kun CERN:n hiukkaskiihdytin LHC ajanmukaistetaan.
Näin ollen pii-ilmaisimien säteilynkestävyyden parantamista eli erilaisten säteilyn aiheuttamien kidevirheiden sekä ilmaisinsovellusten muokkaamista tutkitaan laajasti.
Magneettisella Czochralski-menetelmällä (MCZ) valmistetuista kiekoista prosessoituja p-tyypin ilmaisimia on kuitenkin tarkasteltu melko vähän.
Tässä työssä verrattiin sekä n- että p-tyypin MCZpii-ilmaisimia sekä float zone -menetelmällä (FZ) valmistetuista kiekoista prosessoituja n-tyypin ilmaisimia suorittamalla virtatransienttimittauksia (TCT).

Tulokset osoittavat, että MCZ-piin sähköiset ominaisuudet ovat huomattavasti säteilynkestävämpiä kuin FZ-piin.
Tutkittujen parametrien perusteella voidaan myös päätellä, että p-tyypin MCZ-pii saattaa olla säteilynkestävämpi ilmaisinmateriaali kuin n-tyypin MCZ-pii.
Tämän työn tulokset tukevat siis oletusta, että LHC-kokeiden nykyisten FZ-pii-ilmaisimien vaihtaminen n- tai p-tyypin MCZ-ilmaisimiin olisi varteenotettava vaihtoehto.
ED:2009-10-07
INSSI record number: 38440
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