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Author: | Khanal, Subash |
Title: | Pulsed and transient characterization of THz Schottky diodes |
Publication type: | Master's thesis |
Publication year: | 2012 |
Pages: | ix + 51 Language: eng |
Department/School: | Radiotieteen ja -tekniikan laitos |
Main subject: | Radiotekniikka (S-26) |
Supervisor: | Räisänen, Antti |
Instructor: | Mallat, Juha ; Kiuru, Tero |
Electronic version URL: | http://urn.fi/URN:NBN:fi:aalto-201211243400 |
OEVS: | Electronic archive copy is available via Aalto Thesis Database.
Instructions Reading digital theses in the closed network of the Aalto University Harald Herlin Learning CentreIn the closed network of Learning Centre you can read digital and digitized theses not available in the open network. The Learning Centre contact details and opening hours: https://learningcentre.aalto.fi/en/harald-herlin-learning-centre/ You can read theses on the Learning Centre customer computers, which are available on all floors.
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Location: | P1 Ark Aalto 871 | Archive |
Keywords: | Schottky diode parameter extraction pulsed I-V measurement thermal characterization self-heating time-constant resistance |
Abstract (eng): | Any non-linear electronic device can be used for the purpose of frequency mixing or multiplication. But when the frequency is very high (in THz band), only few devices can provide acceptable conversion efficiency and low noise performance. GaAs Schottky barrier diodes are preferred and commonly used in heterodyne receivers as a mixing element. However, at higher frequencies the diode size is small which reduces its thermal capability and the self-heating is significant even for small current levels. In this master's thesis different electrical and thermal characterization methods for a diode are reviewed. Limitations of the DC I-V measurement method are identified and a test is carried out to study the feasibility of a new pulsed system for characterization of THz Schottky diodes. The military standard method for thermal impedance testing is studied and suitable modifications to the military standard method are proposed. The transient temperature response of the diode is fitted to an exponential function to extract the junction temperature, thermal impedance and thermal time-constants associated with the internal distribution of thermal resistances and heat capacitances of the diode under test. |
ED: | 2012-11-21 |
INSSI record number: 45422
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