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Author:Bosund, Markus
Title:Galliumarsenidipinnan passivointi atomikerroskasvatustekniikalla
Passivation of GaAs Surface Using Atomic Layer Deposition
Publication type:Master's thesis
Publication year:2007
Pages:71      Language:   fin
Department/School:Sähkö- ja tietoliikennetekniikan osasto
Main subject:Optoelektroniikka   (S-104)
Supervisor:Lipsanen, Harri
Instructor:Tiilikainen, Jouni
Electronic version URL: http://urn.fi/urn:nbn:fi:tkk-009745
OEVS:
Electronic archive copy is available via Aalto Thesis Database.
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Location:P1 Ark S80     | Archive
Keywords:ALD
MOVPE
TiN
GaAs
quantum well
passivation
ALD
MOVPE
TiN
GaAs
kvanttikaivo
passivointi
Abstract (eng):In this thesis, a atomic-layer-deposition (ALD) based titanium nitride (TiN) passivation method for gallium arsenide (GaAs) surface has been studied.
Near surface quantum wells (NSQWs) grown in the Micro and Nanosciences Laboratory by Metalorganic Vapor Phase Epitaxy (MOVPE) were used as an indicator for the passivation efficiency.
One part of this thesis was to develop and optimize a TiN process for the Micronova cleanroom ALD system.
The NSQW were covered by TiN and photoluminescence (PL) measurements were performed after growth and one month later in order to find out the time dependence of the passivation effect.
The effects of temperature treatments and oxide layers grown onto TiN passivated NSQWs were also investigated.

The properties (film thickness, mass density and roughness) of the TiN films were researched by growing thin layers on GaAs substrate and using X-ray reflectivity measurements.

The as-grown TiN coated quantum wells showed clear passivation effect in the PL measurements.
After one month the PL properties had weakened but not significantly if the passivation layers were thick enough.
Oxide films growth on TiN passivated NSQWs reduced the passivation effect clearly.
It was also found that TiN passivated NSQWs did not work well after a 300 °C temperature treatment.
Abstract (fin):Työssä tutkittiin Teknillisen korkeakoulun Mikro- ja nanotekniikan laboratoriossa MOVPE-menetelmällä valmistettujen pintakvanttikaivojen passivointia atomikerroskasvatusmenetelmällä (ALD).
Tutkimuksia varten Micronovan puhdastilan ALD-laitteistoon kehitettiin titaaninitridin valmistusprosessi.
Kvanttikaivonäytteet päällystettiin titaaninitridikalvoilla ja passivointivaikutusta tutkittiin fotoluminesenssimittauksin heti näytteiden valmistuksen jälkeen sekä uudelleen kuukauden kuluttua passivoinnin aikariippuvuuden arvioimiseksi.
Lisäksi tutkittiin sitä, miten erilaiset lämpökäsittelyt ja oksidikalvot vaikuttavat titaaninitridipassivoitujen pintakvanttikaivojen toimintaan.

Titaaninitridikerrosten ominaisuuksia tutkittiin tekemällä röntgenheijastusmittauksia galliumarsenidialustakiteen päälle valmistetuille kalvoille.
Mittauksilla saatiin selville kalvojen paksuudet, massatiheydet sekä pinnankarheudet.

Fotoluminesenssimittauksissa havaittiin, että titaaninitridikalvo aiheuttaa pintakvanttikaivoihin selvän passivointiefektin.
Kuukauden kuluttua mitattujen näytteiden ominaisuudet olivat heikentyneet, mutta paksummilla passivointikerroksilla heikentyminen ei ollut merkittävää.
Lisäksi havaittiin, että titaaninitridipäällystetyn pintakvanttikaivon päälle valmistetut oksidikalvot heikentävät passivointivaikutusta selvästi.
Lämpökäsittelytutkimuksissa selvisi, että titaaninitridipassivoidut pintakvanttikaivot eivät kestäneet yli 300 °C:n lämpökäsittelyä.
ED:2007-09-14
INSSI record number: 34573
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