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Author:Sundberg, Pia
Title:Deposition of inorganic-organic hybrid thin films by ALD and MLD
Epäorgaanis-orgaanisten hybridiohutkalvojen kasvatus ALD- ja MLD-menetelmillä
Publication type:Master's thesis
Publication year:2010
Pages:vii + 64 s. + liitt. 1      Language:   eng
Department/School:Kemian laitos
Main subject:Epäorgaaninen kemia   (Kem-35)
Supervisor:Karppinen, Maarit
Instructor:Sood, Anjali ; Malm, Jari
OEVS:
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Location:P1 Ark Aalto  3739   | Archive
Keywords:inorganic-organic hybrid thin film
ALD
MLD
hybridimateriaali
ALD
MLD
ohutkalvo
titaani
Abstract (eng): Inorganic-organic hybrid materials are materials containing both inorganic and organic moieties.
They profit from the chemistry of both parts and may have interesting properties usable in many not-yet-imagined applications.
To realize the potential of many applications a simple and reliable thin film deposition method is required.
Atomic layer deposition (ALD) is a method that is based on sequential, self-limiting surface reactions.
The films fabricated by ALD are uniform and conformal.
The process also provides good control over the thickness of the film and good reproducibility.
In ALD the precursors are traditionally inorganic.
Molecular layer deposition (MLD) is a variant of ALD where the precursors used are purely organic.
It provides similar advantages for polymer film depositions similarly to ALD in case of inorganic films.
The use of ALD together with MLD provides us with a method to prepare inorganic-organic hybrid thin films of high quality with tailored molecular structures.
In the literature part the principle of ALD is described in the first chapter.
An overview of the research done with organic and hybrid thin films is given in end of the literature survey.

In the experimental part inorganic-organic hybrid thin films were prepared using titanium tetrachloride and 4, 4'-oxydianiline as precursors.
The deposition temperatures ranged from 160 to 490 °C.
All the films were smooth and uniform.
The films deposited at temperatures 270 - 490 °C were stable in ambient laboratory air, unlike any other inorganic-organic hybrid thin films deposited by ALD/MLD.
Fourier transform infrared measurements confirmed that reaction between the two precursors took place during the deposition.
Spectroscopy measurements revealed that the growth rate increased with increasing temperature.
Abstract (fin): Materiaaleja, joissa on sekä epäorgaanisia että orgaanisia osia, kutsutaan epäorgaanisorgaanisiksi hybridimateriaaleiksi.
Näissä materiaaleissa voidaan hyödyntää molempien osien kemiaa ja niiden kiinnostavia ominaisuuksia voidaan käyttää lukemattomissa eri sovelluskohteissa.
Mahdollisia käyttökohteita varten tarvitaan yksinkertainen ja luotettava ohutkalvojen kasvatusmenetelmä.
Atomikerroskasvatus (Atomic layer deposition, ALD) on kasvatusmenetelmä, joka perustuu jaksottaisiin, itsekyllästyviin pintareaktioihin.
ALD:llä voidaan valmistaa korkealaatuisia kalvoja, joiden paksuutta voidaan kontrolloida atomikerroksen tarkkuudella.
ALD:ssä käytetyt lähtöaineet ovat tyypillisesti epäorgaanisia.
Molekyylikerroskasvatus (molecular layer deposition, MLD) on ALD:n muunnos, jossa käytetyt lähtöaineet ovat orgaanisia.
Yhdistämällä ALD ja MLD voidaan valmistaa korkealaatuisia epäorgaanis-orgaanisia hybridiohutkalvoja räätälöidyillä molekyylirakenteilla.
Työn kirjallisuusosan esitetään ALD:n periaate lyhyesti ja katsaus tutkimustyöhön, jota on tehty orgaanisilla ja hybridiohutkalvoilla.

Työn kokeellisessa osassa valmistettiin sarja epäorgaanis-orgaanisia hybridiohutkalvoja, joiden lähtöaineina käytettiin titaanitetrakloridia ja 4,4'- oksidianiliinia.
Kasvatuksia tehtiin 160 - 490 °C lämpötilavälillä. 270 - 490 °C lämpötiloissa kasvatetut kalvot olivat stabiileja ilmassa, toisin kuin mitkään aiemmin raportoidut ALD/MLD:llä valmistetut hybridiohutkalvot.
Fourier-muunnos infrapunaspektroskopiamittaukset vahvistivat että lähtöaineet reagoivat keskenään kasvatuksen aikana.
Spektroskoopilla suoritetut paksuuden määritykset osoittivat että kalvojen kasvunopeus kasvoi kasvatuslämpötilan noustessa.
ED:2010-05-04
INSSI record number: 39542
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