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Author:Särkijärvi, Suvi
Title:Atomic layer deposition growth of epitaxial zinc oxide
Epitaktisen sinkkioksidin valmistus atomikerrosdepositiomenetelmällä
Publication type:Licentiate thesis
Publication year:2014
Pages:viii + 71      Language:   eng
Department/School:Sähkötekniikan korkeakoulu
Main subject:
Supervisor:Lipsanen, Harri
Instructor:Suihkonen, Sami
Electronic version URL: http://urn.fi/URN:NBN:fi:aalto-201409252668
OEVS:
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Location:P1 Ark Aalto  1703   | Archive
Keywords:atomic layer deposition
ALD
epitaxial ZnO
atomikerrosdepositio
epitaktinen ZnO
Abstract (eng):In this work the basic characteristics of ZnO, atomic layer deposition (ALD) and epitaxial ZnO growth by ALD are presented, followed by the experimental results of the epitaxial growth of ZnO on GaN template by ALD.
Diethylzinc (DEZn) and water vapour (H2O) were used as precursors.
The structure and the quality of the grown ZnO layers were studied with scanning electron microscope (SEM), atomic force microscope (AFM), X-ray diffraction (XRD), photoluminescence (PL) measurements and positron annihilation spectroscopy.
The ZnO fims were confrmed epitaxial, and the film quality was found to improve with increasing deposition temperature in the vicinity of the threshold temperature of two dimensional growth.
Contrary to previous reports, high-temperature annealing did not enhance the film properties but rather damaged the film.
We conclude that high quality ZnO thin films can be grown by ALD.
Interestingly only separate Zn-vacancies were observed in the films, although ZnO thin films typically contain fairly high density of surface pits and vacancy clusters.
Abstract (fin):Tässä työssä esitetään sinkkioksidin (ZnO), atomikerrosdeposition (ALD) sekä ALD-menetelmällä valmistetun epitaktisen sinkkioksidin perusominaisuukset.
Lisäksi raportoidaan ALD-menetelmällä GaN-alustan päälle valmistettujen ZnO-kalvojen epitaktisuudesta.
Lähtöaineina käytettiin dietyylisinkkiä (DEZn) ja vesihöyryä (H2O).
ZnO kalvojen rakennetta ja laatua tutkittiin elektronisuihkumikroskoopilla (SEM), atomivoimamikroskoopilla (AFM), röntgendiffraktiolla (XRD), fotoluminesenssimittauksilla (PL) ja positroniannihilaatiospektroskopialla.
ZnO-kalvojen todettiin olevan rakenteeltaan epitaktisia ja kalvon laadun parantuvan valmistuslämpötilaa nostettassa kaksiulotteisen kasvun kynnyslämpötilan ympäristössä.
Vastoin edellisiä raportteja lämpökasittely ei parantanut kalvojen laatua, vaan tuhosi kalvot.
Johtopäätöksenä toteamme, että korkealaatuisia ZnO-ohutkalvoja voidaan valmistaa ALD-menetelmällä.
Vastoin odotuksia kalvoissa havaittiin vain yksittäisiä sinkkivakansseja, vaikka ZnO-kalvot sisältävät tyypillisesti suurehkoja määriä kuoppia ja vakanssiryppäitä.
ED:2014-10-05
INSSI record number: 49824
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