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Author:Kauppinen, Christoffer
Title:Fabrication and characterization of plasmonic nanogratings on indium gallium nitride quantum wells
Plasmonisten nanohilojen valmistus ja karakterisointi indiumgalliumnitridi kvanttikaivojen päälle
Publication type:Master's thesis
Publication year:2014
Pages:vi + 58      Language:   eng
Department/School:Sähkötekniikan korkeakoulu
Main subject:Sähköfysiikka   (S3014)
Supervisor:Sopanen, Markku
Instructor:Kujala, Sami
Electronic version URL: http://urn.fi/URN:NBN:fi:aalto-201404181714
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Location:P1 Ark Aalto  1015   | Archive
Keywords:surface plasmons
InGaN
LED
azo-polymer
laser interference lithography
nanostructure
pintaplasmoni
atsopolymeeri
laserinterferenssilitografia
nanorakenne
Abstract (eng):In this work a process for fabricating subwavelength silver gratings on GaN was developed, using azo-polymer surface relief gratings as etch masks.
The azo-polymer gratings were fabricated using laser interference lithography.
The period of the gratings was 255 nm.
The patterned areas were approximately 4 cm2.
The purpose of the gratings was to couple energy from an InGaN quantum well inside the GaN to surface plasmons, and to couple these surface plasmons to radiative modes.
Two-dimensional arrays of gold spheres were fabricated with the same technique.
The diameter of the spheres was approximately 40 nm.
These were used to grow GaAs nanopillars on GaAs using metalorganic vapour phase epitaxy.
Surface plasmon coupling experiments were also performed on the processed GaN samples.
An optical setup was built for this purpose.
The results from the coupling experiments were inconclusive, although the experimental data agrees qualitatively with theory.
Abstract (fin):Tässä työssä kehitettiin prosessi hopeahilojen valmistamiseksi galliumnitridin päälle, käyttäen atsopolymeerihiloja etsausmaskeina.
Atsopolymeerihilat valmistettiin laserinterferenssilitografialla.
Hopeahilojen periodi oli 255 nm.
Kuvioidut näytteet olivat pinta-alaltaan noin 4 cm2.
Hopeahilojen tarkoitus oli kytkeä energiaa galliumnitridin sisällä olevasta indiumgalliumnitridikvanttikaivosta pintaplasmoneihin, ja kytkeä energiaa pintaplasmoneista säteileviin moodeihin.
Kaksiulotteisia kultapallomatriiseja valmistettiin samalla tekniikalla.
Kultapallojen halkaisija oli noin 40 nm.
Näitä käytettiin galliumarsenidinanopilareiden kasvattamiseksi galliumarsenidin päälle käyttäen metallo-orgaanista kaasufaasiepitaksiaa.
Pintaplasmonien kytkeytymiskokeita suoritettiin prosessoiduille galliumnitridinäytteille.
Optinen mittausjärjestely rakennettiin tätä varten.
Plasmonista kytkeytymistä ei varmuudella voitu osoittaa, vaikka kytkeytymiskokeiden tulokset sopivat kvalitatiivisesti teorian kanssa yhteen.
ED:2014-04-20
INSSI record number: 48923
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