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Author:Viljanen, Heikki
Title:Chemical mechanical polishing of copper for MEMS applications
Kuparin kemiallinen mekaaninen kiillotus MEMS sovelluksiin
Publication type:Master's thesis
Publication year:2009
Pages:ix + 62 s. + liitt. 14      Language:   eng
Department/School:Mikro- ja nanotekniikan laitos
Main subject:Optoelektroniikka   (S-104)
Supervisor:Kuivalainen, Pekka
Instructor:Dixit, Pradeep
OEVS:
Electronic archive copy is available via Aalto Thesis Database.
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Location:P1 Ark S80     | Archive
Keywords:chemical mechanical planarization
embedded copper lines
glass
damascene
kemiallinen mekaaninen kiillotus
lasi substraatteihin upotetut kuparijohtimet
Abstract (eng): In this thesis a copper damascene process is developed and characterized with MEMS applications in mind.
The disadvantage of the damascene process is that it is more complicated than the dry etching processes used to pattern aluminium.
The benefit of the process for the MEMS devices is that it enables thicker conductors to be made.

In a nutshell the process is performed in three steps.
First trenches were etched into the substrate and then the trenches were overfilled with copper.
The excess copper is removed in the end with chemical mechanical polishing.

In this thesis the focus is in the characterization and optimization of the chemical mechanical polishing process.
The polishing process optimization was done with silicon wafers that had copper layer on top of them.
The polishing process was then characterized by the amount of removed copper after the polishing experiment.
The optimization was done for down pressure, polishing table rotation speed and slurry flow rate.
The optimized process was then used to remove the excess copper from the g1as wafers.

After the glass wafers were polished, they were used to characterize the polishing process.
The process characterization was done with surface roughness, dishing, erosion and electrical resistivity measurements.
With the developed process flow it was possible manufacture 6 micron thick copper conductors with line widths from 5 to 30 microns and pattern densities up to 60 %.
Abstract (fin): Tässä diplomityössä kehitetään damascene-prosessi kuparin kuvioimiseksi MEMS-sovelluksia varten.
Menetelmä on monimutkaisempi kuin alumiinijohtimien valmistamisessa käytetty, mutta mahdollistaa paksumpien johtimien valmistamisen, mistä on hyötyä etenkin MEMS-sovelluksissa.

Yksinkertaistettuna prosessi käsittää kolme vaihetta.
Aluksi johtimille syövytetään urat lasisubstraattiin.
Tämän jälkeen urat ylitäytetään kuparilla, ja lopuksi ylimääräinen kupari poistetaan kemiallisella mekaanisella kiillotuksella.

Työn pääpaino on kiillotusprosessin optimisointi ja karakterisointi.
Kiillotusprosessin optimointi tehtiin piikiekoilla, joiden päällä oli kerros kuparia.
Jokaisen kiillotuskokeen jälkeen mitattiin kuparin paksuus, jolloin saatiin arvioitua kiillotuspöydän pyörimisnopeuden, kemikaalien virtausnopeuden ja kiillotuspaineen vaikutusta prosessiin.

Piikiekkojen avulla optimoidulla prosessilla kiillotettiin lopuksi lasikiekkoja, joiden avulla karakterisoitiin kiillotusprosessia.
Näytteistä mitattiin pinnankarheus, kuparijohtimen paksuuden alenema, dielektrin paksuuden alenema sekä resistiivisyys.
Kehitetyllä prosessilla on mahdollista valmistaa 6 mikrometriä paksuja viidestä 30 mikrometriin leveitä johtimia, joiden maksimi viivatiheys on 60 %.
ED:2009-12-14
INSSI record number: 38688
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